r07ds0009ej0103 rev.1.03 page 1 of 6 may 09, 2012 preliminary data sheet ? pa1931 mos field effect transistor description the ? pa1931 is a switching device, which can be driven directly by a 4.5 v power source. the ? pa1931 features a low on-state resistance and excellent sw itching characteristics, and is suitable for applications such as power switch of portable machine and so on. features ? 4.5 v drive available ? low on-state resistance ? r ds(on)1 = 65 m ? max. (v gs = ? 10 v, i d = ? 1.8 a) ? r ds(on)2 = 100 m ? max. (v gs = ? 4.5 v, i d = ? 1.8 a) ordering information part no. lead plating packing package ? pa1931te-t1-at * 1 ? pa1931te-t2-at * 1 pure sn (tin) tape 3000 p/reel sc-95 (mini mold thin type) typ. 0.011 g note: * 1 this product does not contain pb. "-t1" and "-t2" in part no. indi cate the unit orientation. marking: ub absolute maximum ratings (t a = 25c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss ? 40 v gate to source voltage (v ds = 0 v) v gss ? 20 v drain current (dc) (t a = 25c) i d(dc) ? 4.5 a drain current (pulse) * 1 i d(pulse) ? 18 a total power dissipation p t1 0.2 w total power dissipation * 2 p t2 2.0 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c single avalanche current * 3 i as 3.5 a single avalanche energy * 3 e as 1.2 mj notes: *1 p w ? 10 ? s, duty cycle ? 1% * 2 mounted on fr-4 board of 50 mm ? 50 mm ? 1.6 mmt, t ? 5 sec *3 t ch(peak) ? 150c, r g = 25 ? r07ds0009ej0103 rev.1.03 may 09, 2012
? pa1931 r07ds0009ej0103 rev.1.03 page 2 of 6 may 09, 2012 electrical characteristics (t a = 25c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss ? 10 ? a v ds = ? 40 v, v gs = 0 v gate leakage current i gss ? 20 ? a v gs = ? 20 v, v ds = 0 v gate cut-off voltage v gs(off) ? 1.0 ? 1.7 ? 2.5 v v ds = ? 10 v, i d = ? 1 ma forward transfer admittance * 1 | y fs | 2.5 s v ds = ? 10 v, i d = ? 1.8 a r ds(on)1 44 65 m ? v gs = ? 10 v, i d = ? 1.8 a drain to source on-state resistance * 1 r ds(on)2 53 100 m ? v gs = ? 4.5 v, i d = ? 1.8 a input capacitance c iss 880 pf output capacitance c oss 150 pf reverse transfer capacitance c rss 115 pf v ds = ? 10 v v gs = 0 v f = 1 mhz turn-on delay time t d(on) 9 ns rise time t r 4 ns turn-off delay time t d(off) 74 ns fall time t f 37 ns v dd = ? 20 v, i d = ? 1.8 a v gs = ? 10 v r g = 10 ? total gate charge q g 20 nc gate to source charge q gs 3 nc gate to drain charge q gd 5 nc v dd = ? 32 v v gs = ? 10 v i d = ? 3.5 a body diode forward voltage * 1 v f(s-d) 1.5 v i f = 3.5 a, v gs = 0 v reverse recovery time t rr 30 ns reverse recovery charge q rr 34 nc i f = 3.5 a, v gs = 0 v di/dt = 100 a/ ? s note: * 1 pulsed test circuit 3 gate charge v gs = ?20 0 v ? pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = ?2 ma 50 d.u.t. r l v dd i d v dd v ds bv dss starting t ch i as v gs(?) 0 duty cycle 1% = 1 s v gs wave form v ds wave form v gs(?) v ds(?) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
? pa1931 r07ds0009ej0103 rev.1.03 page 3 of 6 may 09, 2012 typical characteristics (t a = 25c) 10 ms 30 ms t a = 25c single pulse mounted on 50 mm 50 mm 1.6 mm fr-4 board with a 50 mm 50 mm 35 m copper layer connnected to drain pw = 100 s r ds(on) limited (v gs = ?10 v) 1 ms 100 ms transient thermal resistance vs. pulse width single pulse mounted on 50 mm 50 mm 1.6 mm fr-4 board with a 50 mm 50 mm 35 m copper layer connnected to drain without board drain current vs. drain to source voltage forward transfer characteristics ?0 ?0.2 ?0.4 ?0.6 ?0.8 ?1.0 ?1.2 pulsed ?4.5v v gs = ?10 v ?0.0001 ?0.001 ?0.01 ?0.1 ?1 ?10 ?100 ?0 ?1 ?2 ?3 ?4 v ds = ?10 v pulsed t ch = ?55c ? 25c 25c 75c 125 c 150c r th(ch-a) = 625c/w r th(ch-a) = 99c/w derating factor of forward bias safe operating area 0 20 40 60 80 100 120 dt - percentage of rated power - % 0 25 50 75 100 125 150 175 t c - case temperature - c 100 1 m 10 m 100 m 1 10 100 1000 pw - pulse width - s r th(t) - transient thermal resistance - c/w v ds - drain to source voltage - v v gs - gate to source voltage - v i d - drain current - a i d - drain current - a i d - drain current - a 0.1 1 10 100 1000 v ds - drain to source voltage - v ?0.01 ?0.1 ?1 ?10 ?100 ?0 ?4 ?8 ?12 ?16 ?20 ?0.1 ?1 ?10 ?100 forward bias safe operating area
? pa1931 r07ds0009ej0103 rev.1.03 page 4 of 6 may 09, 2012 gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current ?0 ?1 ?2 ?3 v ds = ?10 v i d = ?1 ma 0.1 1 10 v ds = ?10 v pulsed t ch = ?55c ? 25 c 25 c 75 c 125 c 150 c 0 20 40 60 80 100 0 20 40 60 80 100 pulsed v gs = ?4.5 v ?10 v 0 100 200 300 pulsed i d = ?1.8 a v gs = ?4.5 v i d = ?1.8 a pulsed ?10 v 10 100 1000 10000 v gs = 0 v f = 1 mhz c rss c iss c oss t ch - channel temperature - c ?100 ?50 0 50 100 150 200 t ch - channel temperature - c ?100 ?50 0 50 100 150 200 v gs(off) - gate cut-off voltage - v |y fs | - forward transfer admittance - s drain to source on-state resistance vs. channel temperature drain to source on-state resistance vs. drain current ?0.1 ?1 ?10 ?100 ?0 ?5 ?10 ?15 ?20 i d - drain current - a ?0.1 ?1 ?10 ?100 ?0.1 ?1 ?10 ?100 i d - drain current - a r ds(on) - drain to source on-state resistance - m r ds(on) - drain to source on-state resistance - m r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance -pf
? pa1931 r07ds0009ej0103 rev.1.03 page 5 of 6 may 09, 2012 switching characteristics dynamic input/output characteristics 1 10 100 1000 v ds = ?20 v v gs = ?10 v r g = 10 t d(off) t r t d(on) t f 0 5 10 15 20 i d = ?3.5 a v gs v ds = ?32 v ?20 v ?8v reverse recovery time vs. diode forward current 0.01 0.1 1 10 100 pulsed 0 v v gs = ?10 v ?4.5 v di/dt = 100 a/s v gs = 0 v ?0 ?10 ?20 ?40 ?30 ?0 ?2.5 ?5 ?10 ?7.5 ?0.1 ?1 ?10 i d - drain current - a 10 100 0.1 1 10 100 i f - diode forward current - a t rr - reverse recovery time - ns t d(on) , t r , t d(off) , t f - switching time - ns q g - gate charge - nc v ds - drain to source voltage - v v gs - gate to source voltage - v source to drain diode forward voltage 0 0.2 0.4 0.6 0.8 1.0 1.4 1.2 v f(s-d) - source to drain voltage - v i f - diode forward current - a v ds
? pa1931 r07ds0009ej0103 rev.1.03 page 6 of 6 may 09, 2012 package drawings (unit: mm) sc-95 (mini mold thin type) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ?0.06 2.8 0.2 1.5 0.95 123 654 1.9 2.9 0.2 0.32 +0.1 ?0.05 0.95 0.65 +0.1 ?0.15 1, 2, 5, 6 : drain 3 : gate 4 : source 0.4 equivalent circuit source body diode gate protection diode gate drain remark: the diode connected betweeen the gate and source of the transisor serves as a protector against eds. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ? pa1931 data sheet description rev. date page summary 1.00 jun 01, 2010 ? first edition issued 1.01 oct 20, 2010 p1 taping code corrected 1.02 mar 06, 2012 p1 p3 a type in pt1 item name corrected. a type corrected in legend of "transient thermal resistance vs. pulse width" graph. 1.03 may 09, 2012 p1, p2 minor error correction of letters
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